30v p-channel enhancement-mode mosfet advanced trench process technology high density cell design for ultra low on-resistance (t a = 25 o c unless otherwise noted) sot? 23 (t o?236ab) s-lp3401lt1g d s leshan radio comp any, ltd. g features maximum ratings 3000/tape&reel 10000/tape&reel lp3401lt3g a1 ordering information marking shipping device r ds(on) < 70m ? (v gs = -10v) r ds(on) < 80m ? (v gs = -4.5v) r ds(on) < 120m ? (v gs = -2.5v) v ds (v) = -30v symbol v ds v gs i dm t j , t stg symbol typ max 65 90 85 125 r jl 43 60 w maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 12 gate-source voltage drain-source voltage -30 continuous drain current a maximum units parameter t a =25c t a =70c v v -3.5 -30 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 1 -55 to 150 t a =70c i d -4.2 thermal characteristics (t a = 25 o c unless otherwise noted) a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. 3 1 2 rev .o 1/5 1 2 3 lp3401lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. lp3401lt1g a1 s-lp3401lt1g s-lp3401lt3g
leshan radio comp any, ltd. electrical characteristics symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.7 -1 -1.3 v i d(on) -25 a 70 80 m ? 120 m ? g fs 71 1 s v sd -0.75 -1 v i s -2.2 a c iss 954 pf c oss 115 pf c rss 77 pf r g 6 ? q g 9.4 nc q gs 2n c q gd 3n c t d(on) 6.3 ns t r 3.2 ns t d(off) 38.2 ns t f 12 ns t rr 20.2 ns q rr 11.2 nc body diode reverse recovery time body diode reverse recovery charge i f =-4a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-2.5v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-10v, i d =-4.2a reverse transfer capacitance static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-24v, v gs =0v v ds =0v, v gs =12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-4a i s =-1a,v gs =0v v ds =-5v, i d =-5a i f =-4a, di/dt=100a/ s v gs =0v, v ds =-15v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-4a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3.6 ? , r gen =6 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters (t a = 25 o c unless otherwise noted) rev .o 2/5
leshan radio comp any, ltd. lp3401lt1g , s-lp3401lt1g typical electrical characteristics 0.00 5.00 10.00 15.00 20.00 25.00 0.00 1.00 2.00 3.00 4.00 5.00 -v ds (volts) fig 1: on-region characteristics -i d (a ) v gs =-2v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a ) 20 40 60 80 100 120 0.00 2.00 4.00 6.00 8.00 10.00 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds (on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a ) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n ormalized on-resistance v gs =-2.5v i d =-3.5a, v gs =-10v i d =-3.5a, v gs =-4.5v 10 30 50 70 90 110 130 150 170 190 024 6810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds (on) (m ? ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-1a rev .o 3/5
leshan radio comp any, ltd. typical electrical characteristics 0 1 2 3 4 5 02468 1012 -q g (nc) figure 7: gate-charge characteristics -v gs (v olts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics c apacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) po wer (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja n ormalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (a mps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s rev .o 4/5 lp3401lt1g , s-lp3401lt1g
leshan radio comp any, ltd. no tes: 1 . dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 s ot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev .o 5/5 lp3401lt1g , s-lp3401lt1g
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